Full Profile Inter-Layer Dielectric CMP Analysis

نویسندگان

  • Runzi Chang
  • Costas J. Spanos
چکیده

Chemical Mechanical Polishing (CMP) is currently being used in the fabrication of state-of-the-art integrated circuits, and has been identified as an enabling technology for the semiconductor industry in its drive toward gigabit chips and sub-130nm feature sizes. In this project we present the application of a library-based specular spectroscopic scatterometry method, which is capable of getting a clear view of the profile evolution due to the oxide CMP process. This level of analysis will be crucial in building a rigorous CMP model in the near future.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization

In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the ‘tribological mechanism indicator’ is defined and extracted from the resulti...

متن کامل

Investigating the Longitudinal Optical Conductivity in Three-Layer Graphene Systems with Composes Mono-Bi-Bi and Bi-Mono-Bi and Bi-Bi-Mono

The longitudinal optical conductivity is the most important property for graphene-baseddevices. So investigating this property for spatially separated few-layer graphene systems analytically and numerically is the main purpose of our study. Each layer can be mono- or bi-layer graphene. The density-density correlation function has been screened by the dielectric function using the random p...

متن کامل

Mono-Mono-Mono and Bi-Bi-Bi three-layer graphene systems’ optical conductivity

Investigating the longitudinal optical conductivity of graphene systems, which is the mostimportant property for opto-electronic devices, for three-layer graphene systems theoretically and numerically is the main purpose of this study. Each layer can be mono- or bi-layer graphene. Separation between layers has been denoted by d, selected to be about ten nanometers. The carrier densities i...

متن کامل

Understanding & Controlling LPCs in CMP

The overall trend is that more and more device layers in the fab as well as more and more wafer-level packaging flows require CMP steps for overall process integration. From high-k metal-gate (HKMG) CMOS transistors for 45nm and beyond, to through-silicon vias (TSV) for heterogeneous 3D integration, cleverly engineered substrates such as stressed-silicon-on-insulator (sSOI) and silicon-on-diamo...

متن کامل

Broadband optical end-point detection for linear chemical–mechanical planarization (CMP) processes using an image matching technique

In this paper we discuss an end-point detection (EPD) method for the dielectric linear chemical–mechanical planarization (CMP) processes. The proposed EPD algorithms utilize the interferometry optical signals to determine the post-CMP film thickness. A set of collected broadband spectral signals are formed as a spectral image. An image-matching technique is then used to match the processed sign...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002